| PART |
Description |
Maker |
| PYA28C16BE-20CWM PYA28C16BE-20CWMB PYA28C16BE-20LM |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
|
Pyramid Semiconductor C...
|
| MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
| LC78840M |
Four-times or Eight-times Oversampling Digital Filter
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module
EEPROM MCP
|
White Electronic Designs
|
| SHM80F SHM100F SHM20F SHM60F SHM140F SHM25F SHM40F |
FAST RECOVERY HIGH VOLTAGE RECTIFIER
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER 0.1 A, 6000 V, SILICON, SIGNAL DIODE
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.15 A, 4000 V, SILICON, SIGNAL DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER
RECTIFIER
|
Solid States Devices, Inc
Solid State Devices, Inc.
Solid States Devices, I...
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| 1M110ZS10 1M120ZS10 1M130ZS10 1M150ZS10 1M160ZS10 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 1% tolerance.
1.0 WATT SURMETIC 30 SILICON ZENER DIODES
4 PR #24 DATATWIST PVC
1701A CMP 4BP24 BK 1000F REELEX
1701A CMP 4BP24 GY 1000F SP 1.0瓦SURMETIC 30硅稳压二极管
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -2% tolerance.
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
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